2N4403/2N3906 PNP Transistor

Transistors PNP Silicon Features
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector - Emitter Voltage V CEO 40 Vdc
Collector - Base Voltage V CBO 40 Vdc
Emitter - Base Voltage V EBO 5.0 Vdc
Collector Current - Continuous I C 600 mAdc
Total Device Dissipation @ T A = 25 ° C Derate above 25 ° C P D 625 5.0 mW mW/ ° C
Total Device Dissipation @ T C = 25 ° C Derate above 25 ° C P D 1.5 12 W mW/ ° C
Operating and Storage Junction Temperature Range T J , T stg -55 to +150 ° C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Ambient R q JA 200 ° C/W
Thermal Resistance, Junction-to-Case R q JC 83.3 ° C/W